2. 30? 0. 05 1. 25? 0. 05 1 . 3 0 ? 0 . 0 3 0 . 3 0 2 . 0 0 ? 0 . 0 5 1 . 0 1 r e f MMST2222A transistor (npn) features power dissipation p cm : 0.2 w (tamb=25 ) collector current i cm: 0.6 a collector-base voltage v (br)cbo : 75 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic= 10 a, i e =0 75 v collector-emitter breakdown voltage v (br)ceo ic= 10ma, i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6 v collector cut-off current i cbo v cb =70v, i e =0 0. 1 a collector cut-off current i ceo v ce =35v, i b =0 0. 1 a emitter cut-off current i ebo v eb = 3v, i c =0 0. 1 a h fe(1) v ce =10v, i c = 150ma 100 300 dc current gain h fe(2) v ce =10v, i c = 1ma 50 collector-emitter saturation voltage v ce (sat) i c =500 ma, i b = 50ma 0.6 v base-emitter saturation voltage v be (sat) i c =500 ma, i b = 50ma 1.2 v transition frequency f t v ce =20v, i c = 20ma f= 100mhz 300 mhz output capacitance c ob v cb =10v, i e = 0 f= 1mhz 8 pf delay time t d 10 ns rise time t r v cc =30v, i c =150ma v be(off) =0.5v, i b1 =15ma 25 ns storage time t s 225 ns fall time t f v cc =30v, i c =150ma i b1 = i b2 = 15ma 60 ns marking k3p unit: mm sot-323 1. base 2. emitter 3. collector MMST2222A http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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